SCI/EI/IEEE, included - Sichuan Huacan Electronics Co., LTD.

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1200 V buried gate fin p-body IGBT with ultralow on-state voltage and good short

It was included in IEEE in 2020

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A very narrow mesa biased IGBT for ultra-low on-state saturation voltage and a good short circuit ruggedness

It was included in IEEE in 2019

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High Performance SEB Hardened Trench Power MOSFET with Partially Widened Split Gate and Trench Source

It was included in IEEE in 2019

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Improvement of Clamped Inductive Turn-Off Ruggedness of Trench IGBT at Overcurrent Condition with Optimized Split Gate Structure

It was included in IEEE in 2019

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