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1200 V buried gate fin p-body IGBT with ultralow on-state voltage and good short
2020年被IEEE收录
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A very narrow mesa biased IGBT for ultra-low on-state saturation voltage and a good short circuit ruggedness
2019年被IEEE收录
High Performance SEB Hardened Trench Power MOSFET with Partially Widened Split Gate and Trench Source
Improvement of Clamped Inductive Turn-Off Ruggedness of Trench IGBT at Overcurrent Condition with Optimized Split Gate Structure
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